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september 2001 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj1bj overvoltage protector series tisp4070j1bj thru tisp4395j1bj bidirectional thyristor overvoltage protectors description ground return element of y configuration -2x current capability of y upper elements -available in a wide range of voltages -enables symmetrical and asymmetrical y designs -smb (do-214aa) package ion-implanted breakdown region -precise and stable voltage -low voltage overshoot under surge the tisp4xxxj1bj is a symmetrical voltage-triggered bidirectional thyristor device which has been designed as the tail (ground return) element of a y circuit configured protector. as such, the tisp4xxxj1bj must be rated to conduct the sum of the tip and ring currents. f or example, the normal gr-1089-core testing can impose 200 a, 10/1000 and 1000 a, 2/10 on the ground return element of the y configuration. using the tisp4xxxj1bj together with two tisp4xxxh3bj parts gives a 2x 100 a, 10/1000 y protector circuit. for itu-t applications, us ing the tisp4xxxj1bj with a tisp3xxxt3bj gives a coordinated y protector with a 2x 120 a, 5/310 capability. design tables are given in the applications information section. these smb package combinations are often more space efficient than single package y protectio n multi-chip integrations. these devices allow signal voltages, without clipping, up to the maximum off-state voltage value, v drm , see figure 1. voltages above v drm are limited and will not exceed the breakover voltage, v (bo) , level. if sufficient current flows due to the overvoltage, the device switches into a low- voltage on-state condition, which diverts the current from the overvoltage through the device. when the diverted current falls below the holding current, i h , level the devices switches off and restores normal system operation. how to order device symbol smb package (top view) device v drm v v (bo) v tisp4070j1 58 70 tisp4080j1 65 80 tisp4095j1 75 95 tisp4115j1 90 115 tisp4125j1 100 125 tisp4145j1 120 145 tisp4165j1 135 165 tisp4180j1 145 180 tisp4200j1 155 200 tisp4219j1 180 219 tisp4250j1 190 250 tisp4290j1 220 290 tisp4350j1 275 350 tisp4395j1 320 395 12 mt2 mt1 md4jaa mt2 mt1 sd4jaa rated for international surge wave shapes wave shape standard i ppsm a 2/10 gr-1089-core 1000 8/20 iec 61000-4-5 800 10/160 tia/eia-is-968 (fcc part 68) 400 10/700 itu-t k.20/21/45 350 10/560 tia/eia-is-968 (fcc part 68) 250 10/1000 gr-1089-core 200 ............................................ ul recognized components *rohs directive 2002/95/ec jan 27 2003 including annex device package carrier tisp 4xxxj1bj b j (smb/d o - 214aa j-bend) r (embossed t ape re eled) tisp4xxxj1bjr-s order as *rohs compliant
september 2001 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. absolute maximum ratings, t a = 25 c (unless otherwise noted) tisp4xxxj1bj overvoltage protector series recommended operating conditions rating symbol v alue unit repetitive peak off-state voltage ?070 ?080 ?095 ?115 ?125 ?145 ?165 ?180 ?200 ?219 ?250 ?290 ?350 ?395 v drm 58 65 75 90 100 120 135 145 155 180 190 220 275 320 v non-repetitive peak on-state pulse current (see notes 1 and 2) i ppsm a 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 1000 8/20 (iec 61000-4-5, combination wave generator, 1.2/50 volt age wave shape) 800 10/160 (tia/eia-is-968 (replaces fcc part 68), 10/160 voltage wave shape) 400 4/250 (itu-t k.20/21, 10/700 voltage wave shape, simultaneous) 370 5/310 (itu-t k.20/21, 10/700 volt age wave shape, single) 350 5/320 (tia/eia-is-968 (replaces fcc part 68), 9/720 voltage wave shape, single) 350 10/560 (tia/eia-is-968 (replaces fcc part 68), 10/560 voltage wave shape) 250 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 200 non-repetitive peak on-state current (see notes 1 and 2) i tsm 80 100 a 50 hz, 1 cycle 60 hz, 1 cycle initial rate of rise of on-s tate current, line ar current ramp, maximum ramp value < 50 a di t /dt 800 a/ s junction temperature t j -40 to +150 c storage temperature range t stg -65 to +150 c notes: 1. initially, the device must be in thermal equilibrium with t j =25 c. 2. these non-repetitive rated currents are peak values of either polarity. the surge may be repeated after the device returns to its initial conditions. component min typ max unit r1, r2 series resistor for gr-1089-core first-level surge survival series resistor for itu-t recommendation k. 20/k.45/k.21 (basic coordi nation with 400 v gdt) series resistor for tia/eia-is-968 (replaces fcc part 68), 9/720 survival series resistor for tia/eia-is-968 (replaces fcc part 68), 10/560 survival series resistor for tia/eia-is-968 (replaces fcc part 68), 10/160 survival 0 6.5 0 0 0 ?
september 2001 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj1bj overvoltage protector series electrical characteristics, t a = 25 c (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off- state current v d = v drm t a = 25 c t a = 85 c 5 10 a v (bo) ac breakover voltage dv/dt = 250 v/ms, r source =300 ? 4070 ?080 ?095 ?115 ?125 ?145 ?165 ?180 ?200 ?219 ?250 ?290 ?350 ?395 70 80 95 115 125 145 165 180 200 219 250 290 350 395 v v (bo) ramp breakover voltage dv/dt 1000 v/ s, linear voltage ramp, maximum ramp value = 500 v di/dt = 20 a/ s, linear current ramp, maximum ramp value = 10 a 4070 ?080 ?095 ?115 ?125 ?145 ?165 ?180 ?200 ?219 ?250 ?290 ?350 ?395 77 88 104 125 135 156 177 192 212 231 263 303 364 409 v v (bo) impulse breakover voltage 2/10 wave shape, i pp = 1000 a, r s =2.5 ? , (see note 3) 4070 ?080 ?095 ?115 ?125 ?145 ?165 ?180 ?200 ?219 ?250 ?290 ?350 ?395 96 101 112 130 140 161 183 199 221 242 276 320 386 434 v note 3: dynamic voltage measurements should be made with an oscilloscope with limited band width (20 mhz) to avoid high frequency noise.
september 2001 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj1bj overvoltage protector series electrical characteristics, t a = 25 c (unless otherwise noted) (continued) i (bo) breakover current dv/dt = 250 v/ms, r source =300 ? 600 ma i h holding current i t = 5a, di/dt=+/-30ma/ms 20 ma dv/dt critical rate of rise of off-state voltage linear voltage ramp, maximum ramp value < 0.85 v drm 5 kv/ s i d off-state current v d = 50 v t a = 85 c 10 a c off off-state capacitance f=1mhz, vd=1v rms, v d =0, ?070 thru ?115 ?125 thru ?219 ?250 thru ?395 195 120 105 235 145 125 pf f=1mhz, vd=1v rms, v d =-1v ?070 thru ?115 ?125 thru ?219 ?250 thru ?395 180 110 95 215 132 115 f=1mhz, vd=1v rms, v d =-2v ?070 thru ?115 ?125 thru ?219 ?250 thru ?395 165 100 90 200 120 105 f=1mhz, vd=1v rms, v d =-50v ?070 thru ?115 ?125 thru ?219 ?250 thru ?395 85 50 42 100 60 50 f=1mhz, vd=1v rms, v d = -100 v (see note 4) ?125 thru ?219 ?250 thru ?395 40 35 50 40 note 4: to avoid possible voltage clipping, the ?125 is tested with v d =-98v parameter test conditions min typ max unit thermal characteristics parameter t est condit ions min typ max unit r ja junction to free air thermal resistance eia/jesd51-3 pcb, i t = i tsm(1000) , t a = 25 c, (see note 5) 90 c/w note 5: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths.
september 2001 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj1bj overvoltage protector series parameter measurement information figure 1. voltage-current characteristic for terminals 1-2 all measurements are referenced to terminal 2 -v v drm i drm v d i h i tsm i ppsm v (bo) i d quadrant i switching characteristic +v +i v (bo) v d i d i h i tsm i ppsm -i quadrant iii switching characteristic pm4xaf v drm i drm i (bo) i (bo)
september 2001 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj1bj overvoltage protector series typical characteristics figure 2. figure 3. figure 4. figure 5. off-state current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 |i d | - off-state current - a 0?01 0?1 0? 1 10 100 tc4jag v d = 50 v normalized breakover voltage vs junction temperature t j - junct ion t em perature - c -25 0 25 50 75 100 125 150 normalized breakover voltage 0.90 0.95 1.00 1.05 1.10 1.15 tc4jaf on-state current vs on-state voltage v t - on-state voltage - v 0.7 1.5 2 3 4 1 57 15 10 i t - on-state current - a 1.5 2 3 4 5 7 15 20 30 40 50 70 150 200 300 400 1 10 100 t a = 25 c t w = 100 s tc4jaa normalized holding current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized holding current 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc4jad
september 2001 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj1bj overvoltage protector series typical characteristics figure 6. figure 7. figure 8. normalized capacitance vs off-state voltage v d - off-state voltage - v 0.5 1 2 3 5 10 20 30 50 100 150 capacitance normalized to v d = 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 t j = 25 c v d = 1 vrms tc4jabb differential off-state capacitance vs rated repetitive peak off-state voltage v drm - repetit ive peak off-state voltage - v 50 60 70 80 90 150 200 250 300 350 100 c - differential off-state capacitance - pf 40 50 60 70 80 90 c = c off(-2 v) - c off (-50 v) tc4jae normalized capacitance asymmetry vs off-state voltage v d of f -state voltage v 0.5 0.7 1 23457 20304050 10 normalized capacitance asymmetry - % 0.0 0.5 1.0 1.5 2.0 2.5 tc4jcc v d = 1 v rms, 1 mhz v d = 10 mv rms, 1 mhz
september 2001 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj1bj overvoltage protector series rating and thermal information figure 9. figure 10. non-repetitive peak on-state current vs current duration t - current duration - s 0? 1 10 100 1000 i tsm(t) - non-repetitive peak on-state current - a 2 3 4 5 6 7 8 9 15 20 30 40 10 ti4jaa v gen = 600 vrm s, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 c v drm derating factor vs minimum ambient temperature t amin - minimum ambient temperature - c -35 -25 -15 -5 5 15 25 -40 -30 -20 -10 0 10 20 derating factor 0.93 0.94 0.95 0.96 0.97 0.98 0.99 1.00 ti4jadc '4070 thru '4115 '4125 thru '4219 '4250 thru '4395
september 2001 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj1bj overvoltage protector series applications information y configuration design this protection configuration has three modes of protection. the ring to tip terminal pair protection is given by the series co mbination of protectors th1a and th1b, see figure 11. the terminal pair protection voltage will be the sum of the v (bo) , breakover voltage, of th1a and the v (bo) of th1b. protectors th1a and th1b are the same device type and the terminal pair protection voltage will be 2 v (bo)1 . for a terminal pair protection voltage of 400 v, th1a and th1b would have v (bo)1 = 400/2 = 200 v. similarly for the other terminal pairs, ring to ground protection is given by the series combination of th1b and th2 and the te rminal pair protection voltage is v (bo)1 + v (bo)2 . tip to ground protection voltage will also be v (bo)1 + v (bo)2 . the maximum terminal pair voltage before clipping might occur is the sum of the protector v drm , off-state voltages, see figure 12. for ring to tip this will be 2 v drm1 . the 200 v v (bo)1 protectors of the previous example have a v drm of 155 v, giving a maximum non-clipping signal voltage of 310 v. for ring to ground and tip to ground terminal pairs, the maximum non-clipping signal voltage will be v drm1 + v drm2 . under longitudinal surge conditions, when the prospective currents of the line conductors, i ring and i tip , are equal, th2, the ground return protector, carries the sum of the th1a and th1b currents, see figure 13. the current rating of th2 must be twice that of th1a a nd th1b. gr-1089-core designs the main impulse waveforms of the standard are 500 a, 2/10 and 100 a, 10/1000. assuming fuse current limiters, f1a and f1b, a s uitable th1a and th1b protector for these conductor currents is the tisp4xxxh3bj series of devices. the ground return protector, th2, m ust be rated for at least 1000 a,2/10 and 200 a, 10/1000. a suitable th2 protector for these ground currents is the tisp4xxxj1bj series of d evices. this arrangement is shown in figure 14 and the following table lists all the catalogue device combinations. figure 11. protection voltage figure 12. off-state voltage figure 13. current flow ai4jac th1a th2 th1b ring tip v (bo)1 v (bo)1 v (bo)2 v (bo)1 + v (bo)2 2 v (bo)1 v (bo)1 + v (bo)2 ai4jab th1a th2 th1b ring tip v drm1 v drm1 v drm2 v drm1 + v drm2 v drm1 + v drm2 2 v drm1 th1a ai4jaa th1b ring tip unprotected side protected side i tip i ring ii tip + i ring th2 ring to tip voltages ring to ground, tip to ground voltages gr-1089-core y configuration parts and part voltages v drm v v (bo) v v drm v v (bo) v th1a, th1b part # th2 part # v drm v v (bo) v 116 140 116 140 tisp4070h3bj tisp4070j1bj 58 70 130 160 130 160 tisp4080h3bj tisp4080j1bj 65 80 150 190 150 190 tisp4095h3bj tisp4095j1bj 75 95 180 230 180 230 tisp4115h3bj tisp4115j1bj 90 115 200 250 200 250 tisp4125h3bj tisp4125j1bj 100 125 240 290 240 290 tisp4145h3bj tisp4145j1bj 120 145 270 330 270 330 tisp4165h3bj tisp4165j1bj 135 165 290 360 290 360 tisp4180h3bj tisp4180j1bj 145 180 310 400 310 400 tisp4200h3bj tisp4200j1bj 155 200 360 438 360 438 tisp4219h3bj tisp4219j1bj 180 219
september 2001 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj1bj overvoltage protector series gr-1089-core designs (continued) itu-t k.20, k.45 and k.21 designs the main impulse voltage wave shape of these recommendations is 10/700. the current wave shape is loading dependent, but it is 5/310 into a short circuit. to coordinate with a 400 v primary protector a minimum series resistance of 6.5 ? is required (?he new itu-t telecommunication equipment resistibility recommendations? compliance engineering magazine, january-february 2002). the coordi nation resistance limits the peak non-truncated current to 400/6.5 = 62 a. a suitable th1a and th1b protector for these conductor currents is the tisp3xxxt3bj series of devices, which combine th1a and th1b in a single smb3 package. the ground return protector, th2, must be rated for at least 124 a of a 5/310 waveshape. suitable th2 protectors for these ground currents are the tisp4xxxh3bj or tisp4xxxj1bj series of devices. the arrangement is shown in figure 15 and the following table lists all the catalogue device combinations. using the s mb3 packaged tisp3xxxt3bj saves one third of the pcb placement area compared to solution using three single protector smb packaged devices. 380 500 380 500 tisp4250h3bj tisp4250j1bj 190 250 440 580 440 580 tisp4290h3bj tisp4290j1bj 220 290 550 700 550 700 tisp4350h3bj tisp4350j1bj 275 350 640 790 640 790 tisp4395h3bj tisp4395j1bj 320 395 ring to tip voltages ring to ground, tip to ground voltages gr-1089-core y configuration parts and part voltages v drm v v (bo) v v drm v v (bo) v th1a, th1b part # th2 part # v drm v v (bo) v figure 14. gr-1089-core design figure 15. coordinated itu-t k recommendation design ai4jad th1a tisp4xxxh3bj th2 tisp4xxxj1bj th1b tisp4xxxh3bj f1a f1b ring tip ai4jae th2 tisp4xxxj1bj th1a + th1b tisp4xxxt3bj r1a r1b ring tip ring to tip voltages ring to ground, tip to ground voltages itu-t y configuration parts and part voltages r1a = r1b = 6.5 ? v drm v v (bo) v v drm v v (bo) v th1a + th1b part # th2 part # v drm v v (bo) v 116 140 116 140 tisp3070t3bj tisp4070j1bj 58 70 130 160 130 160 tisp3080t3bj tisp4080j1bj 65 80 150 190 150 190 tisp3095t3bj tisp4095j1bj 75 95 180 230 180 230 tisp3115t3bj tisp4115j1bj 90 115 200 250 200 250 tisp3125t3bj tisp4125j1bj 100 125 240 290 240 290 tisp3145t3bj tisp4145j1bj 120 145 270 330 270 330 tisp3165t3bj tisp4165j1bj 135 165 290 360 290 360 tisp3180t3bj tisp4180j1bj 145 180 310 400 310 400 tisp3200t3bj tisp4200j1bj 155 200 360 438 360 438 tisp3219t3bj tisp4219j1bj 180 219 380 500 380 500 tisp3250t3bj tisp4250j1bj 190 250 440 580 440 580 tisp3290t3bj tisp4290j1bj 220 290
september 2001 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj1bj overvoltage protector series itu-t k.20, k.45 and k.21 designs (continued) an itu-t compliant design would probably require the replacement of the fuses by coordination resistors. with a 410 v off-state voltage, this may seem unnecessary as modern primary protectors will switch at lower voltages and automatically coordinate. on a perfect long itudinal waveform this is true. however, the itu-t also applies a transverse (metallic) test as well, to simulate non-simultaneous switc hing of the primary protection. in this case, one conductor is grounded, which places the ring to tip protection in parallel with the unswi tched primary protector. the 270 v off-state voltage is likely to be lower than the primary switching voltage and there isn? coordination. under gr-1089- core conditions with non-simultaneous switching, the 100 a 10/1000 current, which should have gone through the unswitched prima ry protector, is diverted through the top arms of the y into the switched primary, causing a 200 a current flow in that primary pr otector. 550 700 550 700 tisp3350t3bj tisp4350j1bj 275 350 640 790 640 790 tisp3395t3bj tisp4395j1bj 320 395 ring to tip voltages ring to ground, tip to ground voltages itu-t y configuration parts and part voltages r1a = r1b = 6.5 ? v drm v v (bo) v v drm v v (bo) v th1a + th1b part # th2 part # v drm v v (bo) v asymmetrical designs these designs are for special needs, where the ring to tip protection voltage must be different to the ring to ground and tip t o ground voltages. adsl modem interfaces often have a need for asymmetric voltage limiting, see figure 16. here, the ring to tip voltage limitation is given by the d.c. blocking capacitor, c1, and the ring to ground and tip to ground limitation is insulation break down. often the breakdown limit is set by the spacing of the pw (printed wiring) tracks. figure 17 shows a solution. using two 165 v v (bo) parts for th1a and th1b, the ring to tip voltage is limited to 330 v. using a higher voltage 350 v v (bo) part for th2 limits the insulation stress to 515 v. figure 17 and its following table is for a gr-1089-core compliant design. ring to tip voltages ring to ground, tip to ground voltages gr-1089-core y configuration parts and part voltages v drm v v (bo) v v drm v v (bo) v th1a, th1b th2 part # v drm v v (bo) v part # v drm v v (bo) v 270 330 410 515 tisp4165h3bj 135 165 tisp4350j1bj 275 350 figure 16. adsl modem interface voltage limitations figure 17. asymmetrical design for us adsl modems t1 tip ring c1 t1 or pw insulation breakdown c1 voltage limit ai4jah th1a tisp4165h3bj th2 tisp4350j1bj th1b tisp4165h3bj f1a f1b ring tip
september 2001 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj1bj overvoltage protector series carrier information mechanical data recommended printed wiring land pattern dimensions device symbolization code devices will be coded as below. as the device parameters are symmetrical, terminal 1 is not identified. for production quantities, the carrier will be embossed tape reel pack. evaluation quantities may be shipped in bulk pack or em bossed tape. smb land pattern mdxx bid 2.54 (.100) 2.40 (.095) 2.16 (.085) dimensions are: millimeters (inches) device symbolization code tisp4070j1 4070j1 tisp4080j1 4080j1 tisp4095j1 4095j1 tisp4115j1 4115j1 tisp4125j1 4125j1 tisp4145j1 4145j1 tisp4165j1 4165j1 tisp4180j1 4180j1 tisp4200j1 4200j1 tisp4219j1 4219j1 tisp4250j1 4250j1 tisp4290j1 4290j1 tisp4350j1 4350j1 tisp4395j1 4395j1 package carrier standard quantity smb embossed tape reel pack 3 000 ?isp?is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries.

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